Published: January 24, 2012
Renesas Electronics Announces Low-Loss Silicon Carbide (SiC) Power Device Series Integrating Power Conversion Circuit in a Single Package
TOKYO - (BUSINESS WIRE) - Renesas Electronics Corporation (TSE:6723), a premier provider of
advanced semiconductor solutions, today announced the availability of
three silicon carbide (SiC) compound power devices, the RJQ6020DPM, the
RJQ6021DPM and the RJQ6022DPM, that incorporate multiple SiC diodes and
multiple power transistors in a single package to compose a power
converter circuit or switching circuit. These are the second series of
power semiconductor products from Renesas to employ SiC, a new material
effective in reducing loss, and they are intended for use in home
appliances such as air conditioners, PC servers, and power electronics
products such as solar power generation systems.
Low-Loss Silicon Carbide (SiC) Power Device Compound (Photo: Business Wire)
Recently, efforts to reduce the power consumption of electric devices
have progressed to address considerations such as environmental
protection, and demand has increased for higher efficiency in a variety
of electrical products. In particular, a strong trend can be seen toward
boosting power conversion efficiency and operating efficiency to reduce
power consumption in power switching circuits for products such as air
conditioners, communication base stations, PC servers, and solar power
generation systems, and in inverter circuits for applications such as
motors and industrial equipment. This has spurred demand for power
devices with improved efficiency and lower loss characteristics. Renesas
responded by introducing SiC Schottky barrier diode (SiC-SBD) products
employing SiC to achieve reduced loss. This is now followed by a series
of SiC compound power devices that implement a circuit (switching, power
conversion, etc.) in a single package by combining an SiC-SBD and
high-power MOSFETs or IGBTs.
The new products have a voltage tolerance of 600 V and use an SiC diode
based on low-leakage SiC-SBD technology developed jointly by Hitachi,
Ltd., and Renesas. They combine low loss and compactness and are
available in a fully molded TO-3P package with a 5-pin configuration and
pin assignments optimized for specific applications, making it easy to
configure a circuit unit incorporating them.
Key features of the three new SiC power devices:
(1) The RJQ6020DPM
device for critical-conduction mode PFC applications
The RJQ6020DPM device combines in a single package an SiC-SBD and two
high-voltage power MOSFETs required in switching circuits for
critical-conduction mode PFC in the power supplies of products such as
air conditioners or flat-panel TVs.
The reverse recovery time (trr) of the SiC-SBD is only 15 nanoseconds
(ns), and the high-voltage power MOSFETs are highly efficient
super-junction (SJ-MOS) transistors employing a deep-trench
configuration to achieve a low on-resistance of 100 mΩ.
The new RJQ6020DPM device can also be combined with the R2A20112A/132
critical-conduction mode PFC-IC from Renesas Electronics, making it easy
to implement interleaved control.
(2) The RJQ6021DPM device for
continuous-conduction mode PFC applications
The RJQ6021DPM device combines in a single package an SiC-SBD and two
IGBTs required for PFC in applications such as AC/DC rectifiers for
communication equipment and PC servers.
The reverse recovery time (trr) of the SiC-SBD is only 15 nanoseconds
(ns), and the ultra-thin-wafer IGBTs deliver a low on-voltage of 1.5 V
that is ideal for continuous-conduction mode PFC applications.
The new RJQ6021DPM device can also be combined with the R2A20114A
continuous-conduction mode PFC-IC from Renesas Electronics, making it
easy to implement interleaved control.
(3) The RJQ6022DPM device for inverter half-bridge
circuits
The RJQ6022DPM device combines in a single package two SiC-SBDs and two
IGBTs required for half-bridge circuits in inverters for applications
such as motor drive in air conditioners and industrial machinery.
The reverse recovery time (trr) of the SiC-SBD is only 15 nanoseconds
(ns), and the ultra-thin-wafer IGBTs deliver a low on-voltage of 1.5 V
and short circuit time (tsc) of 6 microseconds (μsec.), which is
suitable for motor drive applications.
A single RJQ6022DPM device is sufficient to implement a half-bridge
circuit, while two can be used for a full-bridge configuration and three
for a three-phase bridge configuration. In addition to simplifying the
design of motor drive circuits, the RJQ6022DPM device will be available
as part of kit solutions with Renesas MCUs such as the RX600 Series.
The new series of SiC compound power devices with a focus on
high-voltage power devices was developed to help bring to customers
total solutions comprising MCUs plus analog and power devices while
putting Renesas Electronics among the leaders in power devices
worldwide. The company plans to roll out kit solutions combining the new
SiC compound power device products with MCUs, power control ICs, and
other devices. Reference boards mounted with the new SiC compound power
devices, PFC-ICs, RX600 Series MCUs, etc., are being planned to help
customers with kit evaluation and product design.
Pricing and Availability
Samples of Renesas' new SiC compound power devices are scheduled to
begin in February 2012, priced at US$10 per unit. Mass production is
scheduled to start in May 2012 and is expected to reach a combined
volume of 300,000 units per month in April 2013. (Pricing and
availability are subject to change without notice.)
(Remarks) All registered trademarks or trademarks are the property of
their respective owners.
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723), the world's number one
supplier of microcontrollers, is a premier supplier of advanced
semiconductor solutions including microcontrollers, SoC solutions and a
broad-range of analog and power devices. Business operations began as
Renesas Electronics in April 2010 through the integration of NEC
Electronics Corporation (TSE:6723) and Renesas Technology Corp., with
operations spanning research, development, design and manufacturing for
a wide range of applications. Headquartered in Japan, Renesas
Electronics has subsidiaries in 20 countries worldwide. More information
can be found at www.renesas.com.
Photos/Multimedia Gallery Available: http://www.businesswire.com/cgi-bin/mmg.cgi?eid=50143902&lang=en
Renesas Electronics Corporation
Kyoko Okamoto, + 81-3-6756-5555
(Japan)
kyoko.okamoto.sx@renesas.com
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