Published:
Research and Markets: Nanometer CMOS: Comprehensive Overview of All the Important Issues Concerning Modern Si MOSFETs
DUBLIN - (BUSINESS WIRE) - Research and Markets (http://www.researchandmarkets.com/research/f10c57/nanometer_cmos)
has announced the addition of Pan Stanford Publishing Pte. Ltd.'s new
report "Nanometer
CMOS" to their offering.
This book gives a comprehensive overview of all the important issues
concerning modern Si MOSFETs. It covers the principles of MOSFET
operation, theory, scaling issues, and an in-depth discussion of
nanometer MOSFETs. Both classical nanometer MOSFETs as well as
non-classical MOSFET concepts, which receive little coverage in
textbooks, are treated in detail. The device structures, merits, and
drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body
SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are
presented.
An entire chapter is devoted to the emerging and rapidly growing field
of RF MOSFETs/RF CMOS, and the discussion extends to the important
future trends in of nanometer CMOS technology and the problems and
limits of scaling.
Readership: Graduates and postgraduate students, researchers, engineers
and managers in the fields of electrical & electronic engineering and
nanoelectronics & microelectronics.
Key Topics Covered:
-
Evolution and Recent Advances in Si Electronics
-
MOSFET Fundamentals, Theory, and Modeling
-
Nanometer MOSFETs
-
RF MOSFETs
-
Overview of Nanometer
CMOS Technology
-
Challenges of Giga-Scale Integration
For more information visit http://www.researchandmarkets.com/research/f10c57/nanometer_cmos
Research and Markets
Laura Wood, Senior Manager,
press@researchandmarkets.com
U.S.
Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
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