Published: October 01, 2009
ON Semiconductor Launches Cost Competitive 0.18 Micron CMOS Manufacturing Process for Digital and Mixed-Signal ASICs
SANTA CLARA, Calif. - (BUSINESS WIRE) - GSA Emerging Opportunities Expo & Conference 2009
ON Semiconductor (Nasdaq: ONNN), a leading global supplier of
high-performance, energy-efficient, silicon solutions, has expanded its
custom foundry capabilities with the launch of a new cost competitive,
industry compatible 0.18 micron (µm) CMOS process technology.
The ONC18 process is an ideal platform for developing low power and
highly integrated digital and mixed-signal application-specific
integrated circuit (ASIC) devices for automotive, industrial and medical
applications. The ONC18-based solutions will be manufactured at ON
Semiconductor's 8-inch wafer fabrication facility in Gresham, Oregon, so
the process is also expected to prove attractive for designers of U.S.
military applications seeking domestic production with ITAR-compliant
partners.
"ONC18 will allow designers in the automotive, industrial, medical and
military sectors to develop integrated, low-power digital and
mixed-signal ASICs quickly and cost-effectively," said Rick Whitcomb,
general manager and director for ON Semiconductor's custom and foundry
division. "The 'on-shore' nature of the fabrication will be particularly
useful for U.S. military customers, while planned developments for the
process further underline ON Semiconductor's commitment to the custom
foundry business."
Suitable for ASICs requiring up to 10 M gates, the ONC18 process
features between four and six levels of metal and allows designers to
integrate 1.8 volts (V) core voltage with 1.8 V and 3.3 V input/output
(I/O). Components for mixed signal design include a variety of resistors
and nominal [1.0 femtofarad per micron squared (fF/µm2)] and
high value (2.0 fF/µm2) stackable metal-insulator-metal (MIM)
capacitors. This base process supports an extensive and modular 0.18
micron BCD, and high voltage roadmap.
ON Semiconductor's new process is supported with a design kit offering
comprehensive core, I/O and memory libraries. Gate densities and power
consumptions for high density core and mixed-signal core cells are 124 K
gates/mm2 and 46 microwatt per megahertz per gate
(µW/MHz/gate) and 120 K gates/mm2 and 28 µW/MHz/gate,
respectively. Memory options include 1.1 M bit synchronous single port
and 512K bit dual port SRAM and 1.1M bit high-density, low-leakage
VIA-programmable ROM. Future development for the ONC18 platform will
enable ON Semiconductor to launch enhanced mixed-signal capabilities and
options for higher voltage handling.
The new process design methodology is compatible with common digital and
analog/mixed-signal CAD tools, including those from Cadence, Synopsys
and Mentor Graphics. ON Semiconductor specialty services, such as
advanced die stitching and shuttle services for prototyping, are also
available for ONC18-based designs.
For more information, please contact Kirk Peterson at kirk.peterson@onsemi.com
or visit http://www.onsemi.com
About ON Semiconductor
With its global logistics network and broad product portfolio, ON
Semiconductor (Nasdaq: ONNN) is a preferred supplier of
high-performance, energy-efficient, silicon solutions that enable
designers to quickly and cost-effectively improve system efficiency for
electronics in the computing,
communications, consumer, automotive, industrial, medical and
military/aerospace markets. The company's portfolio includes power
management, signal, logic, discrete and custom devices. The company
operates a network of manufacturing facilities, sales offices, and
design centers in key markets throughout North America, Europe, and the
Asia Pacific regions. For more information, visit http://www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered
trademarks of Semiconductor Components Industries, LLC. All other brand
and product names appearing in this document are registered trademarks
or trademarks of their respective holders. Although the company
references its Web site in this news release, such information on the
Web site is not to be incorporated herein.
ON Semiconductor
Emily Puckett, 602-244-5670
Marketing
Communications
emily.puckett@onsemi.com
Ken
Rizvi, 602-244-3437
Corporate Development, Treasury & Investor
Relations
ken.rizvi@onsemi.com
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