Published: August 05, 2005
IBM Announces Next Generation Silicon Germanium Technology
Cost Effective, Power Efficient Technology Drives Innovative New Wireless Applications and Devices

IBM today announced the availability of
its fourth generation silicon germanium foundry technology, named 8HP --
with over 2X performance of the previous generation. The new 130
nanometer (nm) silicon germanium (SiGe) bipolar complementary metal oxide
semiconductor (BiCMOS) foundry technology can reduce the cost of mobile
consumer products, advance high-bandwidth wireless communications, and help
enable innovative new applications such as collision-avoidance automobile
radar.
Along with 8HP, IBM is offering a lower cost variation (8WL) specifically
targeted at wireless applications that can enable longer battery life and
increased functionality in cellular handsets in order to help proliferate
wireless local area networking and global positioning satellite (GPS)
technology.
"Silicon germanium technology is increasingly influencing next generation
consumer devices and applications," said Bernie Meyerson, Chief
Technologist for Systems & Technology Group, IBM. "IBM introduced the
technology in 1989 to allow chip designers to increase computer
performance. Over the years, SiGe revolutionized the wireless industry by
providing a high volume Silicon-based technology. The fourth generation of
SiGe will continue to enable wireless connectivity on an increasingly
global scale."

IBM was the first foundry in the world to offer SiGe BiCMOS technology and
since 1995, has shipped hundreds of millions of SiGe devices. CMOS chips
are the foundation for digital computing applications, while silicon
germanium (SiGe) BiCMOS chips provide enhanced radio frequency
communications and analog functions in addition to the core digital
computing capabilities.
IBM's new 130nm SiGe BiCMOS technology's application to products includes:
-- Emerging safety systems for automobiles, including radar at 24 GHz for
blindside detection and at 77 GHz for collision warning or advanced cruise
control.
-- 60 GHz Wi-Fi chips, for next-generation wireless personal-area
networks and backbone nets.
-- Software defined radios for cellular handsets which convert signals
from the antenna directly into a digital form. A single-chip can be
applied across multiple standards and various global mobile networks to
transmit voice, data, and video signals.
-- High-speed A/D and D/A converters for data acquisition, direct-to-
baseband radio receivers, signal synthesis, and more.
"Tektronix has been a SiGe early access partner with IBM for nearly ten
years, and was one of the earliest adopters of SiGe for its products. The
inclusion of SiGe 5HP and 7HP technology in Tektronix' products has enabled
a portfolio of world class, award-winning products," said Dave Brown, Vice
President, Central Engineering, Tektronix. "Our relationship with IBM has
been successful due to the consistent quality of their technology models,
processes and documentation as well as the quality of the people we work
with."
At 130 nanometers (or 130 billionths of a meter), IBM's new SiGe BiCMOS
technology delivers higher performance, lower power and higher levels of
integration than current 180nm SiGe offerings. The technology maintains
compatibility with IBM's application specific integrated circuit (ASIC)
technology platform, enabling foundry clients to port a wide range of
intellectual property circuit blocks and standard cell library elements.
The 130nm foundry platform also includes an RF CMOS technology option,
giving IBM foundry customers a broad range of technology choices for RF and
mixed-signal applications.
"Sierra Monolithics has selected IBM's SiGe8HP technology for demanding
applications such as highly-integrated ultra-high-speed fiber optic
components, high performance data converters and 60GHz broadband wireless
transceivers," said Charles Harper, chairman, Sierra Monolithics. "IBM
leads the industry in SiGe technology which enables our designers to get to
market first with products of unprecedented performance. We are excited
about the new performance regimes and application spaces that we can go
after with this next generation."
Additional technical specifics include:
-- 130nm Lithography based SiGe BiCMOS
-- Advanced SiGe NPNs, Emitter width= 120nm, Ft = 200 GHz (8HP), Ft=100
GHz (8WL)
-- 130nm CMOS FETs, 1.5 / 2.5v
-- Copper Global Wiring Levels + Thick Aluminum Top Level Metal
-- Full Suite of Passives-Resistors, Varactors, MOS and MIM Capacitors,
High Q Inductors
-- Process Design Kits featuring precision RF device models
About IBM
IBM develops, manufactures and markets state-of-the-art semiconductor and
interconnect technologies, products and services including industry-leading
Power Architecture microprocessors. IBM semiconductors are a major
contributor to the company's position as the world's largest information
technology company. Its chip products and solutions power IBM eServer(TM)
and TotalStorage(TM) systems as well as many of the world's best-known
electronics brands.
IBM semiconductor innovations include dual-core microprocessors, copper
wiring, silicon-on-insulator and silicon germanium transistors, strained
silicon, and eFUSE, a technology that enables computer chips to
automatically respond to changing conditions.
IBM, eServer and TotalStorage are trademarks of International Business
Machines Corporation in the United States, other countries, or both.
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